डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH130N20T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTH130N20T
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 16mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum L |
INCHANGE |
|
IXTH130N20T | Power MOSFET TrenchTM Power MOSFET
IXTQ130N20T IXTH130N20T
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Tes |
IXYS |
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