IXTH130N15T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTH130N15T ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum L

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) ≤ 150 130 12 V A mΩ TO-247 (IXTH) Symbol VDSS V DGR V