डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH110N10L2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
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IXTH110N10L2 | Power MOSFET Advance Technical Information
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH110N10L2 IXTT110N10L2
VDSS = 100V
ID25 = 110A ≤ RDS(on) 18mΩ
N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated
TO-24 |
IXYS |
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