IXTC96N25T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var

Preliminary Technical Information Trench Gate IXTC96N25T Power MOSFET (Electrically Isolated Back Surface) VDSS = ID25 = RDS(on) ≤ 250V 40A 31mΩ N-Channel Enhancement Mode Avalanche Rated ISOPLUS220