IXTC110N055T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari

Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 V 78 A 9.0 mΩ Symbol