डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA90N055T2 | Power MOSFET TrenchT2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY90N055T2 IXTA90N055T2 IXTP90N055T2
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C t |
IXYS |
|
IXTA90N055T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |