IXTA32P05T डाटा शीट PDF( Datasheet )

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY32P05T IXTA32P05T IXTP32P05T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to

isc P-Channel MOSFET Transistor IXTA32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable o