IXTA32N20T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTA32N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-

TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD T