IXTA28P065T डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor IXTA28P065T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA ES PD TJ TJM T