IXTA26P10T डाटा शीट PDF( Datasheet )

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤90mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re