IXTA24P085T डाटा शीट PDF( Datasheet )

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA24P085T IXTP24P085T VDSS = ID25 = ≤RDS(on) - 85V - 24A 65mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM T

isc P-Channel MOSFET Transistor IXTA24P085T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable