IXTA240N055T डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IXTA240N055T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA240N055T IXTP240N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 240 3.6
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRM |
 IXYS |
|
| IXTA240N055T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
 INCHANGE |
|
| IXTA240N055T7 | Power MOSFET Preliminary Technical Information
TrenchMVTM
IXTA240N055T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 240 3.6
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EA |
 IXYS Corporation |
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