IXTA220N075T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N075T IXTP220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLR

isc N-Channel MOSFET Transistor IXTA220N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS