IXTA220N055T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N055T IXTP220N055T VDSS = ID25 = RDS(on) ≤ 55 220 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRM

isc N-Channel MOSFET Transistor IXTA220N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 220 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR E