डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA200N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA 200N085T IXTP 200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 I |
IXYS |
|
IXTA200N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
|
IXTA200N085T7 | Power MOSFET Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 200 5.0
V A mΩ
Symbol
Test Conditions
Maximum Ratings T |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |