डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA200N055T2 | Power MOSFET TrenchT2TM Power MOSFET
IXTA200N055T2 IXTP200N055T2
VDSS = ID25 =
RDS(on) ≤
55V 200A 4.2mΩ
N-Channel Enhancement Mode Avalanche Rated
TO-263
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
T |
IXYS |
|
IXTA200N055T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
|
IXTA200N055T2-7 | Power MOSFET TrenchT2TM Power MOSFET
Preliminary Technical Information
IXTA200N055T2-7
VDSS = ID25 =
RDS(on) ≤
55V 200A 4.2mΩ
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
P |
IXYS |
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