IXTA1N100 डाटा शीट PDF( Datasheet )

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variat

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum