IXTA160N085T डाटा शीट PDF( Datasheet )

Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions

isc N-Channel MOSFET Transistor IXTA160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L