IXTA160N075T डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IXTA160N075T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N075T IXTP160N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 160 6.0
V A mΩ
Symbol
Test Conditions
Maximu |
 IXYS Corporation |
|
| IXTA160N075T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
 INCHANGE |
|
| IXTA160N075T7 | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N075T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 160 6.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR E |
IXYS Corporation |
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