डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA160N04T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTA160N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot |
INCHANGE |
|
IXTA160N04T2 | Power MOSFET TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N04T2 IXTP160N04T2
Symbol
VDSS VDGR
VGSM
ID25 IL(RMS) IDM
IA EAS
PD
TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions
Maximum Rating |
IXYS |
www.DataSheet.in | 2017 | संपर्क |