IXTA152N085T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA152N085T IXTP152N085T VDSS = ID25 = RDS(on) ≤ 85 152 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRM

Isc N-Channel MOSFET Transistor IXTA152N085T ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations

Preliminary Technical Information TrenchMVTM IXTA152N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 152 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR