डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA130N10T | Power MOSFET TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst |
IXYS Corporation |
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IXTA130N10T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IXTA130N10T7 | Power MOSFET TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL T
SOLD
Weight
Test C |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |