डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA130N065T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTA130N065T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum |
INCHANGE |
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IXTA130N065T2 | Power MOSFET Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N065T2 IXTP130N065T2
VDSS = ID25 =
RDS(on) ≤
65V 130A 6.6mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS I |
IXYS |
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