डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA120N075T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTA120N075T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.7mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance |
INCHANGE |
|
IXTA120N075T2 | Power MOSFET TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA120N075T2 IXTP120N075T2
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions
Maximum Ratings
TJ |
IXYS |
www.DataSheet.in | 2017 | संपर्क |