डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA110N12T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
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IXTA110N12T2 | Power MOSFET TrenchT2TM Power MOSFET
Advance Technical Information
IXTA110N12T2 IXTP110N12T2
VDSS = 120V
ID25 = 110A RDS(on) 14m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
TO-263AA (IXTA |
IXYS |
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