डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA05N100 | Power MOSFET High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA05N100HV IXTA05N100 IXTP05N100
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = |
IXYS Corporation |
|
IXTA05N100 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variat |
INCHANGE |
|
IXTA05N100HV | Power MOSFET High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA05N100HV IXTA05N100 IXTP05N100
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = |
IXYS |
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