डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXSN55N120AU1 | High Voltage IGBT High Voltage IGBT with Diode
Short Circuit SOA Capability
IXSN 55N120AU1
VCES = 1200 V IC25 = 110 A VCE(sat) = 4V
3 2
Preliminary data
4 www.DataSheet4U.com Symbol 1
Test Conditions TJ = 25°C to 150°C TJ |
IXYS Corporation |
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IXSN55N120AU1 | High Voltage IGBT | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |