IXKH35N60C5 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari

IXKH 35N60C5 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G S ID25 = 35 A VDSS = 600 V R = DS(on) max 0.1 Ω TO-247 AD G D S q D(TAB) MOSFET