डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXKC20N60C | CoolMOS Power MOSFET IXKC 20N60C
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
D
G S
VDSS
= 600 V
ID25
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IXYS Corporation |
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IXKC20N60C | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |