डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXKC19N60C5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
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INCHANGE |
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IXKC19N60C5 | Power MOSFET Advanced Technical Information
IXKC 19N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate cha |
IXYS |
www.DataSheet.in | 2017 | संपर्क |