डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXGX32N170H1 | High Voltage IGBT High Voltage IGBT with Diode
Advance Technical Information
IXGX 32N170H1
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 290 ns
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
VGES VGEM
IC25 IC90 |
IXYS |
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IXGX32N170H1 | High Voltage IGBT | IXYS |
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