| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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IXYS Corporation |
HiPerFET Power MOSFETs l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated f |
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