डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFP130N10T | Power MOSFET Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode
IXFA130N10T IXFP130N10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
PD
T |
IXYS Corporation |
|
IXFP130N10T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXFP130N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lo |
INCHANGE |
|
IXFP130N10T2 | Power MOSFET TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA130N10T2 IXFP130N10T2
Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOL |
IXYS Corporation |
|
IXFP130N10T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXFP130N10T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |