डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFH94N30T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 300V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 36mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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IXFH94N30T | Power MOSFET Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFETs
IXFT94N30T IXFH94N30T
VDSS = 300V
ID25 = 94A ≤ RDS(on) 36mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol |
IXYS |
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