IXFH80N60X2A डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤38mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lo

Advance Technical Information X2-Class HiPerFETTM Power MOSFET AEC Q101 Qualified IXFH80N60X2A VDSS = ID25 =  RDS(on) 600V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-