IXFH6N120P डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXFH6N120P FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.75Ω(Max) @ VGS= 10V ·100%

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md