IXFH320N10T2 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXFH320N10T2 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum

TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS