IXFH230N10T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXFH230N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lo

Preliminary Technical Information Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N10T VDSS ID25 RDS(on) = 100V = 230A ≤ 4.7mΩ TO-247 Symbol V