डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFH230N075T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IXFH230N075T2 | TrenchT2 HiperFET Power MOSFET TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH230N075T2
VDSS ID25
RDS(on)
= 75V = 230A ≤ 4.2mΩ
TO-247
Symbol VDSS VDGR VGSM ID25 ILRMS IDM I |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |