डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFH170N10P | Power MOSFET PolarTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH170N10P IXFK170N10P
VDSS =
ID25 =
RDS(on) ≤
trr
≤
100V 170A 9mΩ 150ns
TO-247 (IXFH)
Symbol V |
IXYS |
|
IXFH170N10P | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
IXFH170N10P
FEATURES ·Drain Current : ID= 170A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9mΩ(Max) ·100% avalanche te |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |