डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFH160N15T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXFH160N15T
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9.6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum |
INCHANGE |
|
IXFH160N15T | Power MOSFET Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFH160N15T
VDSS ID25
RDS(on)
= 150V = 160A ≤ 9.6mΩ
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA |
IXYS Corporation |
|
IXFH160N15T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXFH160N15T2
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum L |
INCHANGE |
|
IXFH160N15T2 | Power MOSFET Preliminary Technical Information
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH160N15T2
VDSS =
ID25
=
≤ RDS(on)
trr
≤
150V 160A 9.0mΩ 160 |
IXYS |
www.DataSheet.in | 2017 | संपर्क |