IXFH150N20T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXFH150N20T ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum L

Advance Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT150N20T IXFH150N20T VDSS = 200V ID25 = 150A ≤ RDS(on) 15mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol