डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
ISL9V3040D3S | N-Channel Ignition IGBT ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
October 20
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D |
Fairchild Semiconductor |
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ISL9V3040D3S | N-Channel Ignition IGBT ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the
next generation ignition IGBT |
ON Semiconductor |
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ISL9V3040D3S | N-CHANNEL IGNITION IGBT UNISONIC TECHNOLOGIES CO., LTD
ISL9V3040D3S
Insulated Gate Bipolar Transistor
300mJ, 400V, N-CHANNEL IGNITION IGBT
DESCRIPTION
The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transi |
Unisonic Technologies |
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ISL9V3040D3ST-F085C | N-Channel IGBT ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
ISL9V3040x3ST-F085C
Features
• SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • T |
ON Semiconductor |
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ISL9V3040D3STV | N-Channel IGBT ISL9V3040D3STV
ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
Features
• SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • This Device is Pb−Free and is RoHS Compliant � |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |