IS61LV256 डाटा शीट PDF( Datasheet )

IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM .EATURES • High-speed access times: -- 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation -- 345 mW (max.) operating

IS61LV25616 FEATURES • • • • • 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Sing

IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 7, 8, 10, 12, and 15 ns • CMOS low power operation • Low stand-by power: — Less than

IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.)

www.DataSheet4U.com IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 10, 12, and 15 ns • Low Active Power — Less than 90mA (typ.) Act

www.DataSheet4U.com IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 10 and 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • • • • • • • • • High-speed access time: 8, 10 ns Operating Current: 50mA (typ.) Standby Current: 700µA (typ.) Multiple center power