डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLZ34N | N-channel Power MOSFET www.DataSheet4U.com
PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche |
International Rectifier |
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IRLZ34N | N-Channel MOSFET www.DataSheet4U.com
Philips Semiconductors
Product specification
N-channel enhancement mode Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power tr |
NXP |
|
IRLZ34N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLZ34N, IIRLZ34N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤35mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
|
IRLZ34NL | N-Channel MOSFET l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
Descript |
International Rectifier |
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IRLZ34NLPBF | Power MOSFET www.DataSheet4U.com
l l
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Ra |
International Rectifier |
|
IRLZ34NPBF | Power MOSFET www.DataSheet4U.com
PD - 94830
l l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Powe |
International Rectifier |
|
IRLZ34NS | HEXFET Power MOSFET l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
Descript |
International Rectifier |
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