IRLR8729 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Lo

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TC = 25°C) 30 V 8.9 mΩ 10 nC f58 A IRLR8729PbF-1 HEXFET® Power MOSFET DD G S S G D-Pak IRLR8729PbF-1 Features Industry-standard pinout D-Pak and I-Pak Comp