IRLR6225 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRLR6225, IIRLR6225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.0mΩ(VGS=4.5V) RDS(on)≤5.2mΩ(VGS=2.5V) ·Enhancement mode: ·100% avalanche tested ·Minimu

PD - 97594 IRLR6225PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 20 4.0 5.2 48 2.2 42h V mΩ mΩ nC Ω A G S D D RDS(on) max (@VGS = 2.5V) S G Qg (typical) RG (typical) ID Applications D-Pak

PD - 97594 IRLR6225PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 20 4.0 5.2 48 2.2 42h V mΩ mΩ nC Ω A G S D D RDS(on) max (@VGS = 2.5V) S G Qg (typical) RG (typical) ID Applications D-Pak