IRLR3114Z डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level Description This HEXFET® Power MOSFET u