डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLR120 | HEXFET Power MOSFET www.DataSheet4U.com
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International Rectifier |
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IRLR120 | Power MOSFET www.vishay.com
IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs |
Vishay |
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IRLR120 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRLR120
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤0.27Ω @VGS=5V ·Enhancement mode:
Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L |
INCHANGE |
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IRLR120A | N-CHANNEL MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1 |
Fairchild |
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IRLR120N | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
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IRLR120N | Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced p |
International Rectifier |
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IRLR120N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRLR120N, IIRLR120N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |