IRLML6302 डाटा शीट PDF( Datasheet )

l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free Descript

Isc P-Channel MOSFET Transistor ·FEATURES ·With SOT-23 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per

l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free Descript

VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.60 2.4 -0.78 V Ω nC A IRLML6302PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM Features Industry-standard pinout SOT-23 Package Compatibl